SIMULATION OF TIME-DEPENDENT QUANTUM TRANSPORT IN-FIELD EMISSION FROMSEMICONDUCTORS - COMPLICATIONS DUE TO SCATTERING, SURFACE-DENSITY, AND TEMPERATURE

Authors
JENSEN KL
Citation
Kl. Jensen, SIMULATION OF TIME-DEPENDENT QUANTUM TRANSPORT IN-FIELD EMISSION FROMSEMICONDUCTORS - COMPLICATIONS DUE TO SCATTERING, SURFACE-DENSITY, AND TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 505-510
Citations number
13
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
505 - 510
Database
ISI
SICI code
1071-1023(1995)13:2<505:SOTQTI>2.0.ZU;2-F