DEFECTS, SURFACE ROUGHENING, AND ANISOTROPY ON THE TENSILE INXGA1-XASINP(001) SYSTEM/

Authors
DIEGUEZ A VILA A CORNET A CLARK SA WESTWOOD DI MORANTE JR
Citation
A. Dieguez et al., DEFECTS, SURFACE ROUGHENING, AND ANISOTROPY ON THE TENSILE INXGA1-XASINP(001) SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 687-695
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
3
Year of publication
1997
Pages
687 - 695
Database
ISI
SICI code
1071-1023(1997)15:3<687:DSRAAO>2.0.ZU;2-X
Abstract
The structural analysis of thin InxGa1-xAs layers grown by molecular b eam epitaxy on (001) oriented InP substrates in the range of tensile d eformation (x<0.53) was performed by means of atomic force and transmi ssion electron microscopies. The evolution of the surface from planar to faceted is described, together with a complete characterization of the defects nucleated during growth. The observed anisotropy on defect formation is proposed as being directly related to the anisotropy on the rough surface morphology. (C) 1997 American Vacuum Society.