BARRIER HEIGHT AT CLEAN AU INAS(100) INTERFACES/

Using photoelectron spectroscopy, we have reexamined the barrier heigh t at Au/InAs(100) contacts prepared under ultrahigh vacuum conditions. The n-barrier height is 0.010 +/- 0.050 eV: the Fermi level at the in terface is right at the InAs conduction band edge. This result is expe cted from models based on charge transfer into metal-induced gap state s but contrasts with previously published experimental values. Dependi ng on the preparation procedure, the surface of InAs(100) grown using molecular-beam epitaxy shows c(4x4) or (2x4) reconstruction; the barri er height, however, is independent of the surface reconstruction prior to gold deposition. (C) 1997 American Vacuum Society.