USE OF INTERFERENCE LITHOGRAPHY TO PATTERN ARRAYS OF SUBMICRON RESISTSTRUCTURES FOR FIELD-EMISSION FLAT-PANEL DISPLAYS

We report on the fabrication of square arrays of submicron resist dots and holes using interference lithography - a relatively simple and in expensive way of generating periodic structures over large areas. The arrays are formed by exposing a layer of resist to a two-beam interfer ence pattern followed by a second exposure after rotating the sample b y 90 degrees. Arrays with periods of 0.67-3.2 mu m were fabricated. Th e size of the structures is accurately controlled by varying the expos ure dose. The exposure latitude for patterning arrays of dots is +/-16 % for a +/-10% change in structure-width when an optimum size-to-perio d ratio is chosen. Compared to dots, holes are patterned with a smalle r process window. We show that arrays of dots with diameters as small as 0.20 mu m, sidewall slopes of 88 degrees, and aspect ratios as high as 3:1 can be produced. These structures are well suited for the prod uction of field emission flat panel displays. (C) 1997 American Vacuum Society.