U. Myler et al., ON THE ELECTRICAL DEACTIVATION OF ARSENIC IN SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 757-759
Previous work on thermally induced arsenic deactivation in highly dope
d silicon has proven the generation bf vacancies and suggests the form
ation of arsenic-vacancy clusters as the deactivation mechanism. Using
positron annihilation spectroscopy in the two-detector coincidence ge
ometry, we are able to show that the thermally generated vacancies are
indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.