ON THE ELECTRICAL DEACTIVATION OF ARSENIC IN SILICON

Authors
MYLER U SIMPSON PJ LAWTHER DW ROUSSEAU PM
Citation
U. Myler et al., ON THE ELECTRICAL DEACTIVATION OF ARSENIC IN SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 757-759
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
3
Year of publication
1997
Pages
757 - 759
Database
ISI
SICI code
1071-1023(1997)15:3<757:OTEDOA>2.0.ZU;2-M
Abstract
Previous work on thermally induced arsenic deactivation in highly dope d silicon has proven the generation bf vacancies and suggests the form ation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence ge ometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.