STRAIN EFFECTS IN CDTE(111) EPITAXIAL LAYERS GROWN ON GAAS(100) SUBSTRATES BY MOLECULAR-BEAM-EPITAXY

Spectroscopic ellipsometry and photoreflectance measurements on CdTe/G aAs strained heterostructures grown by molecular beam epitaxy were car ried out to investigate the effect of the strain and the dependence of the lattice parameter on the CdTe epitaxial layer thicknesses. Compre ssive strains exist in CdTe layers thinner than 2 mu m. As the strain increases, the value of the critical-point energy shift increases line arly. These results indicate that the strains in the CdTe layers grown on GaAs substrates are strongly dependent on the CdTe layer thickness .