IMPROVED DETERMINATION OF MATRIX COMPOSITION OF HG1-XCDXTE BY SIMS

Citation
J. Sheng et al., IMPROVED DETERMINATION OF MATRIX COMPOSITION OF HG1-XCDXTE BY SIMS, Journal of electronic materials, 26(6), 1997, pp. 588-592
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
26
Issue
6
Year of publication
1997
Pages
588 - 592
Database
ISI
SICI code
0361-5235(1997)26:6<588:IDOMCO>2.0.ZU;2-5
Abstract
Results are presented to show an improved method for composition chara cterization of HgCdTe heterostructure using secondary ion mass spectro scopy. This method utilizes the molecular ions CsM+ rather than M+/- i ons. The advantage is that the molecular CsM+ ion yield, unlike the at omic M+/- ions, is quite insensitive to the matrix material from which they are emitted. Composition of multilayer HgCdTe structure can be d etermined with excellent accuracy and depth resolution, Layer thicknes s of HgCdTe heterostructure can also be calibrated.