X-RAY ROCKING CURVE ANALYSIS OF ION-IMPLANTED MERCURY CADMIUM TELLURIDE

Junction formation by ion implantation is a critical step in producing high quality infrared focal plane arrays in mercury cadmium telluride (MCT). We have analyzed the structural properties of MCT implanted wi th B at doses of 10(14) and 10(15) cm(-2) using double and triple crys tal x-ray diffraction (DCD and TCD) to monitor the disorder aad strain of the implanted. region as a function of processing conditions. TCD (333) reflections show that a distinct tensile peak is produced by the high dose implant while the low dose implant shows only a low angle s houlder on the substrate peak. A preliminary association of the low an gle shoulder with point defects has been made since no extended defect s have been observed in the low dose range, For the high dose implant, extended defect formation has been reported and may be responsible fo r the tensile peak. After annealing, the low angle shoulder on the low dose implant has disappeared, while the high dose implant exhibits an increase in the tensile strain from 6.5 x 10(-4) to 9.3 x 10(-4) afte r 24 h of annealing and then decreases in tensile strain to 7.3 x 10(- 4) after 48 h of annealing. It is believed the changes in strain are a ssociated with. the Oswald ripening and dissolution of extended defect s, which has been observed during annealing of ion implanted Si.