MODE OF ARSENIC INCORPORATION IN HGCDTE GROWN BY MBE

The results of arsenic incorporation in HgCdTe layers grown by molecul ar beam epitaxy (MBE) are reported. Obtained results indicate that ars enic was successfully incorporated as accepters in MBE-HgCdTe layers a fter a low temperature anneal. Secondary ion mass spectrometry and Hal l effect measurements confirm that arsenic is incorporated with an act ivation yield of up to 100%. This work confirms that arsenic can be us ed as an effective dopant of MBE-HgCdTe after a low temperature anneal ing under Hg-saturated conditions.