MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-ZNSE-N USING A NOVEL PLASMA SOURCE

We have studied the p-type doping in ZnSe molecular beam epitaxial gro wth using a novel high-power (5 kW) radio frequency (rf) plasma source . The effect of growth conditions such as the rf power, the Se/Zn flux ratio and the growth temperature on p-ZnSe:N was investigated,The net acceptor concentration (N-A - N-D) of around 1 x 10(18) cm(-3) was re producibly achieved. The activation ratio ((N-A - N-D)/[N]) of p-ZnSe: N with N-A - N-D of 1.2 x 10(18) cm(-3) was found to be as high as 60% , which is the highest value so far obtained for N-A - N-D similar to 10(18) cm(-3). The 4.2K photoluminescence spectra of p-ZnSe:N grown un der the optimized growth condition showed well-resolved deep donor-acc eptor pair emissions even with high N-A - N-D.