L. Veger et al., NEW DEVELOPMENTS IN CDTE AND CDZNTE DETECTORS FOR X-RAY AND GAMMA-RAYAPPLICATIONS, Journal of electronic materials, 26(6), 1997, pp. 738-744
There has been considerable resent progress in II-VI semiconductor mat
erial and in methods for improving performance of the associated radia
tion detectors. New high resistivity CdZnTe material, new contact tech
nologies, new detector structures, new electronic correction methods h
ave opened the field of nuclear and x-ray imaging for industrial and m
edical applications. The purpose of this paper is to review new develo
pments in several of these fields. In addition, we will present some r
ecent results at LETI concerning first the CdTe 2-D imaging system (20
x 30 mm(2) with 400 x 600 pixels) for dental radiology and second the
CdZnTe fast pulse correction method applied to a 5 x 5 x 5 mm(3) CdZn
Te detector (energy resolution = 5% for detection efficiency of 85% at
122 keV) for medical imaging.