Ss. Yoo et al., LINEAR-X-RAY DETECTOR ARRAY MADE ON BULK CDZNTE FOR 30-SIMILAR-TO-100KEV ENERGY, Journal of electronic materials, 26(6), 1997, pp. 750-755
A CdZnTe detector grown by the high pressure Bridgman (HPB) growth tec
hnique was tested using high energy x-rays (30 similar to 100 keV), an
d the performance was compared with a commercially available NaI scint
illating detector of 5 cm thickness. The charge collection efficiency
of a CdZnTe detector is as high as 90% at relatively low electric fiel
d, 600 V/cm. At high x-ray photon energies, the detection efficiency i
s reduced due to the thickness of the CdZnTe. A 32 channel linear arra
y was fabricated on 1.2 similar to 1.7 mm thick CdZnTe, of which the d
etector area was 175 x 800 mu m(2) and the pitch size 250 mu m. The me
asured dark current for the 16 element detector was as low as 0.1 pA a
t 800 V/cm with an excellent uniformity. Energy spectra were measured
using a Co-57 radiation source. A small pixel effect and charge sharin
g were observed. The energy resolution was improved and compared with
the large area detector. The array detector gave an average 5.8% full-
width-half-maximum (FWHM) at 122 keV photopeak. The large area detecto
r of the same material before fabrication exhibited a low energy tail
at the photopeak, which limits the photopeak FWHM to 8%.