RTD 2-D MESFET LOGIC ELEMENT FOR COMPACT, ULTRA-LOW-POWER ELECTRONICS/

We describe compact and highly functional logic elements utilizing a t wo dimensional (2-D) MESFET with a resonant tunneling diode load, The 2-D MESFET uses two lateral Schottky gate contacts to modulate the wid th of the 2-D electron gas layer, The novel contact geometry results i n reduced gate capacitance, ultra-low-power performance, and the elimi nation of the Narrow Channel Effect (NCE) compared to conventional HFE T's or MESFET's. The advantage of using an RTD as the load device is t he reduction of the static power consumption at the logical high input level, We demonstrate low-power RTD/2-D MESFET inverter operation as well as compact NAND and NOR gates using a single RTD/2-D MESFET pair, We also present optimized inverter elements and estimate from SPICE s imulations the power-delay products of RTD/2-D MESFET ring oscillators , Compared to recently reported values for CMOS on SOI, the RTD/2-D ME SFET technology is expected to exhibit one order of magnitude less act ive power dissipation and a factor of 3 lower power-delay product.