INGAAS INP THERMOELECTRIC INFRARED-SENSOR UTILIZING SURFACE-BULK MICROMACHINING TECHNOLOGY/

A novel InGaAs/InP micromachined thermoelectric sensor is presented, T he key features of the reported sensors are the high thermal resistivi ty and high mobility of InGaAs lattice matched to InP, combined with a value of Seebeck coefficient that is acceptable for such applications , The anisotropic and selective surface bulk micromachining properties of this material system were successfully applied to devices aligned along the [010] orientation on a [100] InP wafer and the details of th e technology used for this purpose are presented, A responsivity of 18 4 V/W and a relative detectivity of 7.1 x 10(8) cm Hz(-1/2)/W have bee n demonstrated using this new sensor approach.