BIAS TEMPERATURE INSTABILITY IN HYDROGENATED THIN-FILM TRANSISTORS

The bias temperature instability is studied in hydrogenated n- and p-c hannel thin-film MOS transistors (TFT's) fabricated using a low-temper ature process compatible with active matrix liquid crystal display app lication, We observe significant threshold voltage and subthreshold sl ope degradation under both positive and negative bias stress, The degr adation increases with increased hydrogen incorporation and is tempera ture and electric field activated, The experimental results are explai ned based on trap creation model which depends on the hydrogen content of the device.