FABRICATION OF ULTRATHIN, HIGHLY UNIFORM THIN-FILM SOI MOSFETS WITH LOW SERIES RESISTANCE USING PATTERN-CONSTRAINED EPITAXY

Authors
WONG HS CHAN KK LEE Y ROPER P TAUR Y
Citation
Hs. Wong et al., FABRICATION OF ULTRATHIN, HIGHLY UNIFORM THIN-FILM SOI MOSFETS WITH LOW SERIES RESISTANCE USING PATTERN-CONSTRAINED EPITAXY, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1131-1135
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
7
Year of publication
1997
Pages
1131 - 1135
Database
ISI
SICI code
0018-9383(1997)44:7<1131:FOUHUT>2.0.ZU;2-5
Abstract
We report a novel fabrication process for self-aligned, ultrathin, hig hly uniform thin-film SOI MOSFET's with low series resistance, Self-al igned, ultrathin SOI n-MOSFET's with 8 nm-50 nm undoped channel were f abricated, For n-MOSFET's with a 0.2 mu m effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (R-s/d = 333 Omega.mu m) were obtained.