TUNNELING SOURCE-BODY CONTACT FOR PARTIALLY-DEPLETED SOI MOSFET

Authors
CHEN VMC WOO JCS
Citation
Vmc. Chen et Jcs. Woo, TUNNELING SOURCE-BODY CONTACT FOR PARTIALLY-DEPLETED SOI MOSFET, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1143-1147
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
7
Year of publication
1997
Pages
1143 - 1147
Database
ISI
SICI code
0018-9383(1997)44:7<1143:TSCFPS>2.0.ZU;2-6
Abstract
In this paper, a novel self-aligned asymmetric source-body contact is proposed based on the tunneling effect. The fabrication is relatively simple with only one extra angle implant step. Test structures have be en fabricated and good electrical results were obtained. The improveme nts of this new approach in both device performance and manufacturing compared to fully-depleted SOI MOSFET's will be discussed.