RELATION BETWEEN TRAP CREATION AND BREAKDOWN DURING TUNNELING CURRENTSTRESSING OF SUB 3 NM GATE OXIDE

Authors
DEPAS M HEYNS MM
Citation
M. Depas et Mm. Heyns, RELATION BETWEEN TRAP CREATION AND BREAKDOWN DURING TUNNELING CURRENTSTRESSING OF SUB 3 NM GATE OXIDE, Microelectronic engineering, 36(1-4), 1997, pp. 21-24
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
21 - 24
Database
ISI
SICI code
0167-9317(1997)36:1-4<21:RBTCAB>2.0.ZU;2-0
Abstract
The wear-out of sub 3 nm gate oxide layers during tunnelling current s tressing has been characterised by charge to breakdown (Q(BD)), tunnel current instability and stress induced leakage current (SILC) measure ments. A correlation is found between the maximum value of the Q(BD) d istribution and the amount of SILC for different tunnelling current st ress conditions. The experimental results are consistent with the oxid e breakdown model based on electron trap creation.