POSITRON-ANNIHILATION AS A TOOL FOR THE STUDY OF DEFECTS IN THE MOS SYSTEM

In this paper we discuss the potential of positrons for the study of d efects in the MOS system. It is shown that Doppler broadening measurem ents of the positron annihilation radiation reveals properties not det ected by conventional techniques such as electron spin resonance measu rements. Guiding the positrons towards the Si/SiO2 interface constitut es an advantageous approach for studying the properties of this region . Examples of the correlation between technologically affected electri cally active defect centers and positron annihilation data are discuss ed. We also briefly deal with the extension of the technique to provid e more detailed information using lifetime, correlation and two-dimens ional angular correlation annihilation radiation measurements.