CHARGE-PUMPING CHARACTERIZATION OF TRANSISTORS WITH COMMON GATE, SOURCE AND BULK PADS

Authors
REIMBOLD G MARCHAND B BLACHIER D
Citation
G. Reimbold et al., CHARGE-PUMPING CHARACTERIZATION OF TRANSISTORS WITH COMMON GATE, SOURCE AND BULK PADS, Microelectronic engineering, 36(1-4), 1997, pp. 47-50
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
47 - 50
Database
ISI
SICI code
0167-9317(1997)36:1-4<47:CCOTWC>2.0.ZU;2-3
Abstract
It is generally admitted that charge pumping studies must be performed on transistors with independent pads. However many test structures in clude transistors with common gate and source pads. This paper shows t hat basic charge pumping measurements are still possible on these tran sistors. Virgin and stressed NMOS and PMOS devices from 0.25 mu m to 0 .8 mu m technologies are analyzed.