Citation
Rab. Devine et al., USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR, Microelectronic engineering, 36(1-4), 1997, pp. 61-64
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
61 - 64
Database
ISI
SICI code
0167-9317(1997)36:1-4<61:UOCTTA>2.0.ZU;2-7
Abstract
A novel electron cyclotron resonance plasma-enhanced chemical vapor de
position process using an alternative carbon-free source, namely TaF5,
is proposed to obtain high quality amorphous Ta2O5 films. The excelle
nt physical and electrical properties suggest that this material is cl
early compatible with the requirements of high density CMOS operation,
as demonstrated by the fabrication of p-channel MOS transistors with
a Ta2O5 gate insulator.