ELECTRICAL RELIABILITY OF ULTRA-THIN REMOTE PLASMA-DEPOSITED OXIDES ON SILICON

Authors
RAGNARSSON LA LUNDGREN P JAUHIAINEN A
Citation
La. Ragnarsson et al., ELECTRICAL RELIABILITY OF ULTRA-THIN REMOTE PLASMA-DEPOSITED OXIDES ON SILICON, Microelectronic engineering, 36(1-4), 1997, pp. 65-67
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
65 - 67
Database
ISI
SICI code
0167-9317(1997)36:1-4<65:EROURP>2.0.ZU;2-Q
Abstract
The degradation of ultra thin remote plasma enhanced chemical vapor de position (RPECVD) oxides during direct tunneling electron injection wa s studied and compared to that of thermally grown oxides. The deposite d oxides were found to detoriate during injection and to recover after wards in the same way as thermally grown ones. Also found was that the energy loss at the interface of the injected electrons is a much bett er parameter than the injected current density for estimating the gene rated charge density.