PLASMA-ASSISTED FORMATION OF LOW DEFECT DENSITY SILICON-CARBIDE SILICON DIOXIDE, SIC-SIO2, INTERFACES

Authors
GOLZ A LUCOVSKY G KOH K WOLFE D NIIMI H KURZ H
Citation
A. Golz et al., PLASMA-ASSISTED FORMATION OF LOW DEFECT DENSITY SILICON-CARBIDE SILICON DIOXIDE, SIC-SIO2, INTERFACES, Microelectronic engineering, 36(1-4), 1997, pp. 73-76
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
73 - 76
Database
ISI
SICI code
0167-9317(1997)36:1-4<73:PFOLDD>2.0.ZU;2-G
Abstract
The initial stages of SiC-SiO2 interface formation by low temperature (300 degrees C) remote plasma assisted oxidation (RPAO) of flat and vi scinal 6H SiC(0001) surfaces have been studied by online Auger electro n spectroscopy (AES). Differences in post-deposition/oxidation anneali ng for devices fabricated using plasma-assisted and conventional therm al processing, respectively, have been correlated with differences in interfacial bonding chemistries.