SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION)

Authors
NORMAND P TSOUKALAS D KAPETANAKIS E VANDENBERG JA ARMOUR DG STOEMENOS J
Citation
P. Normand et al., SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION), Microelectronic engineering, 36(1-4), 1997, pp. 79-82
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
79 - 82
Database
ISI
SICI code
0167-9317(1997)36:1-4<79:SNFITT>2.0.ZU;2-B
Abstract
Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscop y which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as de current measurements.