HIGH-TEMPERATURE OXIDE (HTO) FOR NON VOLATILE MEMORIES APPLICATIONS

High Temperature Oxide (HTO) properties are investigated to replace bo th ONO interpoly dielectric in flash memory cells and thermal gate oxi de in peripheral transistors (decoding logic). HTO cells charge loss a nd write-erase endurance characteristics are close to ONO cells. For p eripheral transistors, interface states density can be decreased down to thermal oxide D-it by an O-2 anneal, however negative bulk trapping remains larger than for thermal oxide. HTO was then demonstrated to b e an interesting solution for lost cost per bit flash cells memories, even if some improvement for peripheral oxide replacement are required .