PROPERTIES OF AL2O3-FILMS DEPOSITED ON SILICON BY ATOMIC LAYER EPITAXY

Al2O3-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900 degrees C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densifica tion did not significantly influence the breakdown fields which were i n the range of 7-8 MV/cm, but reduced the leakage currents through the films by several orders of magnitude. Mobile charges and charge trapp ing were observed using the capacitance-voltage technique. The chargin g properties improved dramatically after the post-deposition anneal.