LIGHT-EMISSION DURING DIRECT AND FOWLER-NORDHEIM TUNNELING IN ULTRA-THIN MOS TUNNEL-JUNCTIONS

Citation
E. Cartier et al., LIGHT-EMISSION DURING DIRECT AND FOWLER-NORDHEIM TUNNELING IN ULTRA-THIN MOS TUNNEL-JUNCTIONS, Microelectronic engineering, 36(1-4), 1997, pp. 103-106
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
103 - 106
Database
ISI
SICI code
0167-9317(1997)36:1-4<103:LDDAFT>2.0.ZU;2-7
Abstract
Light emission from silicon/silicon dioxide/metal tunnel junctions is shown to cover a wide wavelength range from to infrared into the near- ultraviolet. The energy of the emitted light increases with increasing junction bias. This behavior appears to be consistent with calculatio ns for light emission from direct conduction to conduction band transi tion of the hot electrons after tunneling into the silicon.