BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()

Strong blue (around 470 nm) and violet (around 395 nm) photoluminescen ce (PL) at room temperature (RT) was obtained from thermally-grown SiO 2 films on crystalline Si implanted with Si+ and Ge+ ions, respectivel y. Photoluminescence excitation (PLE) spectroscopy measurements indica te maximum PL at 248 nm (for Si+) and 242 nm (for Ge+). The blue PL in tensity was investigated as a function of subsequent furnace and flash lamp annealing. The results obtained are interpreted in terms of the excess atoms introduced in the SiO2 network.