ELECTRICAL, OPTICAL AND LUMINESCENT PROPERTIES OF SI3N4 FILMS CONTAINING SI NANOCLUSTERS

Authors
BARU VG BAYLISS S CHERNUSHICH AP ELINSON MI HARRIS P JITOV VA POKALYAKIN VI STEPANOV GV ZAHAROV LY
Citation
Vg. Baru et al., ELECTRICAL, OPTICAL AND LUMINESCENT PROPERTIES OF SI3N4 FILMS CONTAINING SI NANOCLUSTERS, Microelectronic engineering, 36(1-4), 1997, pp. 111-114
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
111 - 114
Database
ISI
SICI code
0167-9317(1997)36:1-4<111:EOALPO>2.0.ZU;2-T
Abstract
Visible photo- and electroluminescence was found at room temperature i n two types of nanocomposite layers SiNx(Si). The first type of layers was obtained by annealing a-Si films in nitrogen at 900-950 degrees C . The second type of layers was obtained by ion-plasma reactive sputte ring of a Si target in a nitrogen atmosphere. The photo- and electrolu minescence spectral response, optical transmission and voltage-current characteristics of the SiNx nanocomposite layers have been studied. S tructural information has been obtained from electron microscopy. Poss ible physical mechanisms for the observed effects are discussed.