CHARACTERIZATION OF SILICON LEDS INTEGRATED WITH OXIDIZED POROUS SILICON SOI

Authors
BALUCANI M BONDARENKO V DOROFEEV A ERMALITSKI F KAZUCHITS N MAIELLO G MASINI L MELNIKOV S LAMONICA S VOLCHEK S FERRARI A
Citation
M. Balucani et al., CHARACTERIZATION OF SILICON LEDS INTEGRATED WITH OXIDIZED POROUS SILICON SOI, Microelectronic engineering, 36(1-4), 1997, pp. 115-118
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
115 - 118
Database
ISI
SICI code
0167-9317(1997)36:1-4<115:COSLIW>2.0.ZU;2-T
Abstract
Slightly modified CMOS process has been used for the formation of late ral pn junctions in SOI structures based on oxidized porous silicon. U nder forward bias these junctions emit infrared light at 1120 nm. Unde r reverse bias in the breakdown regime the pn junctions demonstrate bo th infrared and visible light emissions with efficiencies of 10(-4) an d 10(-7), respectively. The beneficial influence of SOI structures on electroluminescence characterictics of light-emitting pn junctions has been established.