BOHM TRAJECTORIES FOR THE MODELING OF TUNNELING DEVICES

Authors
SUNE J ORIOLS X GARCIAGARCIA JJ MARTIN F GONZALEZ T MATEOS J PARDO D
Citation
J. Sune et al., BOHM TRAJECTORIES FOR THE MODELING OF TUNNELING DEVICES, Microelectronic engineering, 36(1-4), 1997, pp. 125-128
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
125 - 128
Database
ISI
SICI code
0167-9317(1997)36:1-4<125:BTFTMO>2.0.ZU;2-L
Abstract
It is shown that quantum phenomena in electron devices, such as tunnel ing of electrons, can be modeled using Bohm trajectories. Fowler-Nordh eim tunneling in thin-oxide MOS structures and resonant tunneling in d ouble barrier diodes are considered.