THE CHARACTERIZATION OF BONDED SILICON-ON-INSULATOR (BSOI) STRUCTURESUSING LOW-TEMPERATURE SCANNING CATHODOLUMINESCENCE (CL) AND SECONDARY-ION MASS-SPECTROMETRY (SIMS)

A number of BSOI structures, applicable to CMOS devices, were analysed . Interfacial impurities and process generated defects, such as disloc ations, are potentially detrimental to the electronic properties of th ese materials and analytical techniques which can reveal the presence of such problems are of vital importance. In this paper we present dat a which shows how CL and SIMS can combine to identify such problems. W e have identified an interaction between the presence of boron and hyd rogen species in the SiO2 layer and also give evidence to suggest that the combination of electron beam exposure and thermal cycling can mod ify the electronic properties of the oxide.