SIO2 AS AN INSULATOR FOR SIC DEVICES

Authors
HARRIS CI AFANASEV VV
Citation
Ci. Harris et Vv. Afanasev, SIO2 AS AN INSULATOR FOR SIC DEVICES, Microelectronic engineering, 36(1-4), 1997, pp. 167-174
Citations number
58
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
167 - 174
Database
ISI
SICI code
0167-9317(1997)36:1-4<167:SAAIFS>2.0.ZU;2-6
Abstract
The ability to form a thermal oxide on SiC is seen as being of key imp ortance in the practical realisation of high power switching devices. To date efforts to reproduce the refined process technology possible i n Si has met with limited success in SiC. In this paper we review curr ent understanding of the oxidation technology used in SiC.