THE ROLE OF OXYGEN AND NITROGEN AT THE SIO2 SIC INTERFACE/

Authors
GOLZ A SCHARNHOLZ S KURZ H
Citation
A. Golz et al., THE ROLE OF OXYGEN AND NITROGEN AT THE SIO2 SIC INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 187-190
Citations number
11
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
187 - 190
Database
ISI
SICI code
0167-9317(1997)36:1-4<187:TROOAN>2.0.ZU;2-A
Abstract
A method for surface preparation of 6H-SiC with different plasma sourc es (oxygen, anti nitreous oxide) to reduce defects in deposited gate o xides is presented. CV- (Capacitance-Voltage) measurements prove that by suitable processing defect densities call be reduced by one order o f magnitude down in the range of 10(11) cm(-2) In contrast to silicon nitrogen disturbs the deposition of oxides on SiC. By AES (Angel Elect ron Spectroscopy) measurements the different behavior of nitrogen at t he SiO2/SiC interface compared to the SiO2/Si interface is analyzed.