GENERATION AND ANNEALING OF HOT HOLE INDUCED INTERFACE STATES

Authors
ALKOFAHI IS ZHANG JF GROESENEKEN G
Citation
Is. Alkofahi et al., GENERATION AND ANNEALING OF HOT HOLE INDUCED INTERFACE STATES, Microelectronic engineering, 36(1-4), 1997, pp. 227-230
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
227 - 230
Database
ISI
SICI code
0167-9317(1997)36:1-4<227:GAAOHH>2.0.ZU;2-5
Abstract
Hole injection into SiO2 creates interface states not only during the injection, but also after the injection is terminated. This paper stud ies the annealing behaviour of interface states generated during and p ost hole injection. Interface states created by different stresses are compared and the role played by electron injection is investigated. T he involvement of hydrogen species in the annealing is discussed and t he hole detrapping process is addressed.