RADIATION-INDUCED H+ TRAPPING IN BURIED SIO2

The irradiation response of mobile H+ in the buried oxide of SOI mater ials is investigated as a function of applied electric field during ir radiation. It is observed that H+ trapping occurs near the substrate S i/SiO2 interface during irradiation under positive top Si bias (Eox 2 +0.2 MV/cm); this effect is not observed when the irradiation is perfo rmed in the absence of bias or under negative bias. Post irradiation p roton detrapping data show that the positive bias/irradiation combinat ion activates a shallow proton trap in the buried oxide near the subst rate Si/SiO2 interface.