ELECTRICAL INVESTIGATION OF THE SILICON DIAMOND INTERFACE/

Authors
EDHOLM B OLSSON J KESKITALO N VESTLING L
Citation
B. Edholm et al., ELECTRICAL INVESTIGATION OF THE SILICON DIAMOND INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 245-248
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
245 - 248
Database
ISI
SICI code
0167-9317(1997)36:1-4<245:EIOTSD>2.0.ZU;2-P
Abstract
A new method for measuring the interface properties, using diamond ter minated silicon p-n diodes, is used to quantify the electrical quality and to determine the conduction mechanism of the silicon/diamond inte rface for two types of diamond. It was found that a high concentration of surface states in the interface caused the diode leakage current t o increase. The results also suggest a solution to suppress electrical degradation by introducing a thin silicon dioxide layer between the s ilicon and the diamond film.