IDENTIFICATION OF THE MICROSCOPIC STRUCTURE OF NEW HOT-CARRIER DAMAGECENTERS IN SHORT-CHANNEL MOSFETS

Authors
BILLMAN CA LENAHAN PM WEBER W
Citation
Ca. Billman et al., IDENTIFICATION OF THE MICROSCOPIC STRUCTURE OF NEW HOT-CARRIER DAMAGECENTERS IN SHORT-CHANNEL MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 271-274
Citations number
33
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
271 - 274
Database
ISI
SICI code
0167-9317(1997)36:1-4<271:IOTMSO>2.0.ZU;2-I
Abstract
We show, for the first time, that E' centers can be generated in hot h ole stressing of short channel metal oxide silicon field effect transi stors (MOSFETs). Prior to this study only P-b centers had been directl y linked to this stressing phenomena.