TRADE-OFFS BETWEEN TUNNELING AND HOT-CARRIER INJECTION IN SHORT-CHANNEL FLOATING-GATE MOSFETS

Authors
SELMI L GHETTI A BEZ R SANGIORGI E
Citation
L. Selmi et al., TRADE-OFFS BETWEEN TUNNELING AND HOT-CARRIER INJECTION IN SHORT-CHANNEL FLOATING-GATE MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 293-296
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
293 - 296
Database
ISI
SICI code
0167-9317(1997)36:1-4<293:TBTAHI>2.0.ZU;2-T
Abstract
In this paper, we investigate the gate current of scaled floating gate MOSFETs at low drain voltage (V-DS much less than 3 V) ol er a broad range of gate voltages. It is shown that under suitable bias condition s, as those typically encountered while reading the data of non-volati le memory cells, the gate current can be explained as a hybrid tunneli ng/hot-carrier injection regime.