INFLUENCES OF THE DIFFERENT DEGRADATION MECHANISMS IN AC-STRESSED P-MOSFETS DURING PASS TRANSISTOR OPERATION

New degradation mechanisms are found during AC pass transistor operati on combined with charge-pumping analysis in thin gate-oxide p-MOSFET's . The electron trapping is clearly saturating and in some cases can be completely suppressed by the subsequent detrapping phases leading to the strong influence of donor type interface traps alone, as no positi ve oxide charge is detected in a moderate field range. These influence s reduce the transistor performances as in the case of n-MOSFET's and become more pronounced in 7nm gate-oxide, showing a large dependence w ith the propagation delay. This is partly due to the low sensitivity t o the negative trapped charge with respect to the increasing proportio n of the detrapped charge and of generated interface traps in 7nm gate -oxide surface-channel p-MOSFET's.