NEW INSIGHTS ON THE CHARGING AND DISCHARGING OF ELECTRON TRAPS CREATED BY HOMOGENEOUS ELECTRON INJECTION IN GATE OXIDE

Authors
AURIEL G DUBUC JP SAGNES B OUALID J VUILLAUME D
Citation
G. Auriel et al., NEW INSIGHTS ON THE CHARGING AND DISCHARGING OF ELECTRON TRAPS CREATED BY HOMOGENEOUS ELECTRON INJECTION IN GATE OXIDE, Microelectronic engineering, 36(1-4), 1997, pp. 309-312
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
309 - 312
Database
ISI
SICI code
0167-9317(1997)36:1-4<309:NIOTCA>2.0.ZU;2-B
Abstract
In this work, we give some insights on the charging and discharging pr operties of electron traps created in gate oxide by homogeneous electr on injection with the aim at further relating them to breakdown. We pr esent a new procedure for determining the electrical properties of the se traps. A model based on trap to band tunneling gives an estimation of their energy levels in the oxide gap.