IMPACT OF BORON PENETRATION ON GATE OXIDE RELIABILITY AND DEVICE LIFETIME IN P-POLY PMOSFETS()

Authors
KIM BY LIU IM LUAN HF GARDNER M FULFORD J KWONG DL
Citation
By. Kim et al., IMPACT OF BORON PENETRATION ON GATE OXIDE RELIABILITY AND DEVICE LIFETIME IN P-POLY PMOSFETS(), Microelectronic engineering, 36(1-4), 1997, pp. 313-316
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
313 - 316
Database
ISI
SICI code
0167-9317(1997)36:1-4<313:IOBPOG>2.0.ZU;2-X
Abstract
The effects of boron penetration on device performance and reliability of p(+)-poly PMOSFETs are investigated extensively with different RTA drive-in conditions. High drive-in temperature causes significant bor on-penetration induced mobility degradation in PMOSFETs, resulting deg raded device performance. Boron penetration enhances charge trapping i n oxide and interface state generation at Si/SiO2 interfaces under F-N stress. Gate oxide reliability and device lifetime in the PMOSFETs du e to this degradation are systematically studied.