QUANTITATIVE MODEL OF THE THICKNESS DEPENDENCE OF BREAKDOWN IN ULTRA-THIN OXIDES

Authors
STATHIS JH
Citation
Jh. Stathis, QUANTITATIVE MODEL OF THE THICKNESS DEPENDENCE OF BREAKDOWN IN ULTRA-THIN OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 325-328
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
325 - 328
Database
ISI
SICI code
0167-9317(1997)36:1-4<325:QMOTTD>2.0.ZU;2-5
Abstract
Computer calculations of the formation of a percolation path across a thin oxide are used to model breakdown. Quantitative agreement with th e measured interface state density at breakdown is obtained. The case of homogeneously distributed defects is compared to exponentially dist ributed defects near one interface.