RESEARCH OF HIGH-TEMPERATURE INSTABILITY PROCESSES IN BURIED DIELECTRIC OF FULL DEPLETED SOI MOSFETS

In this work the processes of thermal-bias charge instability in the b uried oxide of SIMOX SOI full depleted inversion mode (IM) n-MOSFET's and accumulation mode (AM) p-MOSFET's are studied. High-temperature ki nk effect in IM back n-MOSFET is first considered. Observed effects of thermal-bias instability and high-temperature kink effect are explain ed by thermally activated positive charge transport through buried oxi de with following electron injection from the silicon film into the bu ried oxide.