DIFFUSION-MODEL FOR HIGH-TEMPERATURE OFF-STATE CURRENTS IN SOI MOSFETS

Authors
RUDENKO TE KILCHITSKAYA VI RUDENKO AN
Citation
Te. Rudenko et al., DIFFUSION-MODEL FOR HIGH-TEMPERATURE OFF-STATE CURRENTS IN SOI MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 367-370
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
367 - 370
Database
ISI
SICI code
0167-9317(1997)36:1-4<367:DFHOCI>2.0.ZU;2-C
Abstract
In this paper off-state drain currents in long-channel inversion mode SOI MOSFETs are investigated in the range 50-320 degrees C by measurem ents and simulations. The behavior of high-temperature (T>200 degrees C) off-state currents is interpreted in terms of diffusion model, base d on the analysis of carrier distribution in a SOI film in off-state o f the device. The back-gate biasing and the silicon film thinning effe cts on high-temperature off-state currents are analyzed.