ANALYTICAL MODELING OF THE SUBSTRATE EFFECT ON ACCUMULATION-MODE SOI PMOSFETS AT ROOM-TEMPERATURE AND AT 77 K

Authors
PAVANELLO MA MARTINO JA COLINGE JP
Citation
Ma. Pavanello et al., ANALYTICAL MODELING OF THE SUBSTRATE EFFECT ON ACCUMULATION-MODE SOI PMOSFETS AT ROOM-TEMPERATURE AND AT 77 K, Microelectronic engineering, 36(1-4), 1997, pp. 375-378
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
375 - 378
Database
ISI
SICI code
0167-9317(1997)36:1-4<375:AMOTSE>2.0.ZU;2-4
Abstract
In this work a theoretical and experimental analysis ef the substrate effect on fully depleted accumulation-mode silicon-on-insulator (SOI) pMOSFETs at room acid at liquid nitrogen temperatures is presented. Th e theoretical results are compared with MEDICI numerical bidimensional simulations in order to validate the proposed model. The substrate in fluence on the SOI pMOSFET front threshold voltage is given. Finally, a comparison between modeled and experimental data is realized.