The kinetics and mechanisms of processes involved in the thermal oxida
tion of NiS/InP structures in oxygen were investigated. Surface oxidat
ion involves the following sequence of phase changes: nickel sulfide -
-> sulfate ---> oxide. Simultaneously, reactions at the film/substrate
interface yield In2S3 and NiP2. With increasing oxidation temperature
and/or time, the indium content of the film rises. Reaction of indium
with nickel oxide and sulfate leads to rapid formation of In2O3. This
step, controlled by indium diffusion, makes the major contribution to
film growth.