IRRADIATION EFFECTS ON THE HIGH-FIELD BEHAVIOR OF VERY THIN SILICA LAYERS

Authors
AASSIME A SARRABAYROUSE GJ SALACE G PETIT C
Citation
A. Aassime et al., IRRADIATION EFFECTS ON THE HIGH-FIELD BEHAVIOR OF VERY THIN SILICA LAYERS, Solid-state electronics, 41(7), 1997, pp. 945-949
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
7
Year of publication
1997
Pages
945 - 949
Database
ISI
SICI code
0038-1101(1997)41:7<945:IEOTHB>2.0.ZU;2-4
Abstract
Irradiation effects on the electrical characteristics under high field stress of nitrided and non-nitrided very thin silicon oxide films are studied. The generation of new electron traps during constant current stress is increased for irradiated samples. This enhancement is more significant for pure silicon dioxide when compared to nitrided oxide. Further, the correlation between charge to breakdown and traps generat ion rate during constant current injection is verified and remains val id after irradiation. (C) 1997 Elsevier Science Ltd.