POLARITY DEPENDENCE OF CUMULATIVE PROPERTIES OF CHARGE-TO-BREAKDOWN IN VERY THIN GATE OXIDES

Authors
BROZEK T SZYPER EC VISWANATHAN CR
Citation
T. Brozek et al., POLARITY DEPENDENCE OF CUMULATIVE PROPERTIES OF CHARGE-TO-BREAKDOWN IN VERY THIN GATE OXIDES, Solid-state electronics, 41(7), 1997, pp. 995-999
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
7
Year of publication
1997
Pages
995 - 999
Database
ISI
SICI code
0038-1101(1997)41:7<995:PDOCPO>2.0.ZU;2-Q
Abstract
The cumulative character of wear-out of thin silicon oxide layers is i nvestigated under unipolar and DC bipolar stress. It is found thar for bipolar degradation occurring under constant-current stress, the tota l Q(bd) significantly exceeds values expected from a combination of po larity-dependent progressive wear-out. The results are explained by a model in which regions where degradation takes place under stress of e ither polarity are separated physically within the oxide film. (C) 199 7 Elsevier Science Ltd.