CZOCHRALSKI GROWTH OF SI-RICH AND GE-RICH SIGE SINGLE-CRYSTALS

Authors
ABROSIMOV NV ROSSOLENKO SN THIEME W GERHARDT A SCHRODER W
Citation
Nv. Abrosimov et al., CZOCHRALSKI GROWTH OF SI-RICH AND GE-RICH SIGE SINGLE-CRYSTALS, Journal of crystal growth, 174(1-4), 1997, pp. 182-186
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
174
Issue
1-4
Year of publication
1997
Pages
182 - 186
Database
ISI
SICI code
0022-0248(1997)174:1-4<182:CGOSAG>2.0.ZU;2-V
Abstract
Si1-xGex single crystals (0 < x < 0.15) with diameter up to 2 in were grown by conventional Czochralski technique. The method for the growth of Ge(1-x)Six crystals using continuous feeding the melt with a numbe r of Si rods was developed and the Ge1-xSix crystals (0 < x < 0.3) wer e grown. The growth process both Si1-xGex and Ge1-xSix crystals was ca rried out using the automated control system based on the crystal weig hing. The peculiarities of weight control at the stage of conical part formation are considered.